COLLISION CASCADE AND PRIMARY RADIATION DAMAGE IN SILICON CARBIDE: A MOLECULAR DYNAMICS STUDY

Silicon carbide (SiC) is a competitive candidate material to be used in several advanced and Generation-IV nuclear reactor designs as neutron moderator, fuel coating, cladding, or core structural material. Many studies have been performed investigate the durability of SiC severe environment reactor. However, nature behavior defect induced by irradiation are still not fully understood. This paper aimed study collision cascade primary radiation damage using molecular dynamics simulation. The potential being was hybrid Tersoff modified with Ziegler-Biersack-Littmark (ZBL) screening function. let evolved for 10 ps from Si C knocked atom (PKA) located initially at top center system containing 960000 atoms. simulation carried out room temperature well fission reactor-relevant temperatures. It obtained that number point defects were larger than defects. stable found temperature-dependent. also recovery high (>800°C).